semiconductor group 1 09.96 type ordering code tape and reel information pin configuration marking package 1234 bsp 129 q67000-s073 e6327: 1000 pcs/reel g d s d bsp 129 sot-223 bsp 129 q67000-s314 e7941: 1000 pcs/reel v gs(th) selected in groups: ( see page 212 ) maximum ratings parameter symbol values unit drain-source voltage v ds 240 v drain-gate voltage, r gs = 20 k w v dgr 240 gate-source voltage v gs 14 gate-source peak voltage, aperiodic v gs 20 continuous drain current, t a = 34 ?c i d 0.2 a pulsed drain current, t a = 25 ?c i d puls 0.6 max. power dissipation, t a = 25 ?c p tot 1.7 w operating and storage temperature range t j , t stg C 55 + 150 ?c thermal resistance 1) chip-ambient chip-soldering point r thja r thjs 72 12 k/w din humidity category, din 40 040 C e C iec climatic category, din iec 68-1 C 55/150/56 1) transistor on epoxy pcb 40 mm 40 mm 1.5 mm with 6 cm 2 copper area for drain connection. sipmos a small-signal transistor bsp 129 l v ds 240 v l i d 0.2 a l r ds(on) 20 w l n channel l depletion mode l high dynamic resistance l available grouped in v gs(th)
semiconductor group 2 bsp 129 electrical characteristics at t j = 25 ?c, unless otherwise specified. parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs = - 3 v, i d = 0.25 ma v (br)dss 240 C C v gate threshold voltage v ds = 3 v, i d = 1 ma v gs(th) - 1.8 - 1.2 - 0.7 drain-source cutoff current v ds = 240 v, v gs = - 3 v t j = 25 ?c t j = 125 ?c i dss C C C C 100 200 na m a gate-source leakage current v gs = 20 v, v ds = 0 i gss C 10 100 na drain-source on-resistance v gs = 0 v, i d = 0.014 a r ds(on) C 7.0 20 w dynamic characteristics forward transconductance v ds 3 2 i d r ds(on)max , i d = 0.25 a g fs 0.14 0.2 C s input capacitance v gs = 0, v ds = 25 v, f = 1 mhz c iiss C 110 150 pf output capacitance v gs = 0, v ds = 25 v, f = 1 mhz c oss C2030 reverse transfer capacitance v gs = 0, v ds = 25 v, f = 1 mhz c rss C710 turn-on time t on , ( t on = t d(on) + t r ) t d(on) C46ns v dd =30v, v gs = - 2 v ... + 5 v, r gs =50 w , i d = 0.25 a t r C1015 turn-off time t off , ( t off = t d(off) + t f ) t d(off) C1520 v dd =30v, v gs = - 2 v ... + 5 v, r gs =50 w , i d = 0.25 a t f C2535
semiconductor group 3 package outline 1) a specific group cannot be ordered separately. each reel only contains transistors from one group. electrical characteristics (contd) at t j = 25 ?c, unless otherwise specified. parameter symbol values unit min. typ. max. reverse diode continuous reverse drain current t a = 25 ?c i s C C 0.15 a pulsed reverse drain current t a = 25 ?c i sm C C 0.45 diode forward on-voltage i f = 0.3 a, v gs = 0 v sd C 0.7 1.4 v v gs(th) grouping symbol limit values unit test condition min. max. range of v gs(th) d v gs(th) C 0.2 v C threshold voltage selected in groups 1) : f g a b c d v gs(th) C 1.600 C 1.700 C 1.800 C 1.900 C 2.000 C 2.100 C 1.400 C 1.500 C 1.600 C 1.700 C 1.800 C 1.900 v v v v v v v ds1 = 0.2 v; v ds2 = 3 v; i d = 10 m a sot-223 dimensions in mm bsp 129
semiconductor group 4 characteristics at t j = 25 ?c, unless otherwise specified total power dissipation p tot = f ( t a ) typ. output characteristics i d = f ( v ds ) parameter: t p = 80 m s safe operating area i d = f ( v ds ) parameter: d = 0.01, t c = 25 ?c typ. drain-source on-resistance r ds(on) = f ( i d ) parameter: v gs bsp 129
semiconductor group 5 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 m s, v ds 3 2 i d r ds(on)max. drain-source on-resistance r ds(on) = f(t j ) parameter: i d = 0.014 a, v gs = 0 v, (spread) typ. forward transconductance g fs = f ( i d ) parameter: v ds 3 2 i d r ds(on)max. , t p = 80 m s typ. capacitances c = f ( v ds ) parameter: v gs = 0, f = 1 mhz bsp 129
semiconductor group 6 gate threshold voltage v gs(th) = f ( t j ) parameter: v ds = 3 v, i d = 1 ma, (spread) drain current i d = f ( t a ) parameter: v gs 3 3 v forward characteristics of reverse diode i f = f ( v sd ) parameter: t p = 80 m s, t j , (spread) safe operating area i d = f ( v ds ) parameter: d = 0, t c = 25 ?c bsp 129
semiconductor group 7 bsp 129 drain-source breakdown voltage v (br) dss = b v (br)dss (25 ?c)
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